Infineon FF11MR12W2M1H_B70 Type N-Channel MOSFET, 75 A, 1200 V Enhancement EasyPACK FF11MR12W2M1HB70BPSA1

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RS庫存編號:
348-975
製造零件編號:
FF11MR12W2M1HB70BPSA1
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

75A

Maximum Drain Source Voltage Vds

1200V

Series

FF11MR12W2M1H_B70

Package Type

EasyPACK

Mount Type

Screw

Maximum Drain Source Resistance Rds

20.1mΩ

Channel Mode

Enhancement

Forward Voltage Vf

5.35V

Maximum Power Dissipation Pd

20mW

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

23 V

Maximum Operating Temperature

150°C

Standards/Approvals

IEC 60749, IEC 60747, IEC 60068

Automotive Standard

No

COO (Country of Origin):
DE
The Infineon EasyDUAL 2B CoolSiC MOSFET Half-Bridge Module combines cutting-edge technology with superior design for high performance power applications. With a best-in-class packaging and a compact 12.25 mm height, it optimizes both space and performance. The module utilizes leading-edge Wide Bandgap (WBG) material, providing enhanced power efficiency, thermal performance, and reliability. Its very low module stray inductance minimizes power losses and improves switching behaviour.

Outstanding module efficiency

System cost advantages

System efficiency improvement

Reduced cooling requirements

Enabling higher frequency

Increase of power density

Better thermal conductivity of DCB material

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