Infineon FS13MR12W2M1H_C55 Type N-Channel MOSFET, 62.5 A, 1200 V Enhancement EasyPACK FS13MR12W2M1HC55BPSA1

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RS庫存編號:
348-979
製造零件編號:
FS13MR12W2M1HC55BPSA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

62.5A

Maximum Drain Source Voltage Vds

1200V

Series

FS13MR12W2M1H_C55

Package Type

EasyPACK

Mount Type

Screw

Maximum Drain Source Resistance Rds

21.7mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

20mW

Forward Voltage Vf

5.35V

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

23 V

Maximum Operating Temperature

150°C

Standards/Approvals

IEC 60749, IEC 60747, IEC 60068

Automotive Standard

No

COO (Country of Origin):
DE
The Infineon EasyPACK 2B CoolSiC MOSFET 1200 V, 13 mΩ Six-Pack Module integrates CoolSiC MOSFET Enhanced Generation 1 technology for high performance power applications. Housed in a best-in-class package with a compact 12 mm height, it delivers optimal space efficiency without sacrificing performance. The module is built with leading-edge Wide Bandgap (WBG) materials, ensuring superior efficiency, thermal performance, and reliability.

Outstanding module efficiency

System cost advantages

System efficiency improvement

Reduced cooling requirements

Enabling higher frequency

Increase of power density

Better thermal conductivity of DCB material

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