ROHM HT8K 2 Type N-Channel MOSFET, 13 A, 100 V Enhancement, 8-Pin HSMT-8 HT8KE6TB1

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小計(1 組,共 10 件)*

TWD301.00

(不含稅)

TWD316.00

(含稅)

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單位
每單位
每膠帶*
10 - 90TWD30.10TWD301.00
100 - 240TWD28.60TWD286.00
250 - 490TWD26.50TWD265.00
500 - 990TWD24.40TWD244.00
1000 +TWD23.50TWD235.00

* 參考價格

包裝方式:
RS庫存編號:
264-876
製造零件編號:
HT8KE6TB1
製造商:
ROHM
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品牌

ROHM

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

100V

Package Type

HSMT-8

Series

HT8K

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

57mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

6.7nC

Maximum Power Dissipation Pd

14W

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

The ROHM power MOSFET features a dual N-channel configuration with a voltage rating of 100V and a current capacity of 13A. Designed in an HSOP8 package and offers low on-resistance.

Low on-resistance

Small Surface Mount Package (HSOP8)

Pb-free lead plating and RoHS compliant

Halogen Free

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