IXYS Type N-Channel MOSFET, 150 A, 150 V Enhancement, 4-Pin SOT-227 IXFN180N15P
- RS庫存編號:
- 194-259
- 製造零件編號:
- IXFN180N15P
- 製造商:
- IXYS
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- RS庫存編號:
- 194-259
- 製造零件編號:
- IXFN180N15P
- 製造商:
- IXYS
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | SOT-227 | |
| Mount Type | Panel Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 11mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 680W | |
| Typical Gate Charge Qg @ Vgs | 240nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 38.23mm | |
| Height | 9.6mm | |
| Width | 25.42mm | |
| 選取全部 | ||
|---|---|---|
品牌 IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type SOT-227 | ||
Mount Type Panel Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 11mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 680W | ||
Typical Gate Charge Qg @ Vgs 240nC | ||
Maximum Operating Temperature 175°C | ||
Length 38.23mm | ||
Height 9.6mm | ||
Width 25.42mm | ||
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
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