製造零件編號

Bourns BIDW20N60T Single Diode IGBT, 20 A 600 V TO-247

RS庫存編號:: 253-3505
製造零件編號:: BIDW20N60T
製造商:: Bourns

Bourns BIDW20N60T Single Diode IGBT, 20 A 600 V TO-247

可享批量折扣

小計（1 包，共 2 件）*

TWD178.00

(不含稅)

TWD186.90

訂單超過 $1,300.00 免費送貨

暫時缺貨

2,196 件準備從其他地點送貨

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單位	每單位	每包*
2 - 8	TWD89.00	TWD178.00
10 - 48	TWD79.50	TWD159.00
50 - 98	TWD75.50	TWD151.00
100 - 248	TWD65.50	TWD131.00
250 +	TWD64.50	TWD129.00

* 參考價格

RS庫存編號:: 253-3505
製造零件編號:: BIDW20N60T
製造商:: Bourns

規格

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Bourns
	Maximum Continuous Collector Current	20 A
	Maximum Collector Emitter Voltage	600 V
	Maximum Gate Emitter Voltage	±20V
	Number of Transistors	1
	Maximum Power Dissipation	192 W
	Configuration	Single Diode
	Package Type	TO-247

	選取全部
	品牌 Bourns
	Maximum Continuous Collector Current 20 A
	Maximum Collector Emitter Voltage 600 V
	Maximum Gate Emitter Voltage ±20V
	Number of Transistors 1
	Maximum Power Dissipation 192 W
	Configuration Single Diode
	Package Type TO-247

Datasheet - BIDW20N60T

The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower conduction loss and fewer switching losses. In addition, this structure provides a positive temperature coefficient.

600 V, 20 A, Low Collector-Emitter Saturation Voltage (VCE(sat))
Trench-Gate Field-Stop technology
Optimized for conduction
Low switching loss
RoHS compliant

Bourns BIDW20N60T Single Diode IGBT, 20 A 600 V TO-247

訂單超過 $1,300.00 免費送貨

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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