小計（1 管，共 600 件）*
TWD44,040.00
(不含稅)
TWD46,242.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 1,800 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 600 + | TWD73.40 | TWD44,040.00 |
* 參考價格
- RS庫存編號:
- 253-3501
- 製造零件編號:
- BIDNW30N60H3
- 製造商:
- Bourns
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Bourns | |
| Maximum Continuous Collector Current Ic | 30A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 230W | |
| Package Type | TO-247 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Series | BIDNW30N60H3 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Bourns | ||
Maximum Continuous Collector Current Ic 30A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 230W | ||
Package Type TO-247 | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Series BIDNW30N60H3 | ||
Automotive Standard No | ||
The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses.
600 V, 30 A, Low Collector-Emitter Saturation Voltage (VCE(sat))
Trench-Gate Field-Stop technology
Low switching loss
Fast switching
RoHS compliant