Bourns BIDW50N65T IGBT, 100 A 650 V TO-247
- RS庫存編號:
- 253-3509
- 製造零件編號:
- BIDW50N65T
- 製造商:
- Bourns
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TWD256.00
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TWD268.80
(含稅)
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD128.00 | TWD256.00 |
| 10 - 48 | TWD115.00 | TWD230.00 |
| 50 - 98 | TWD109.00 | TWD218.00 |
| 100 - 248 | TWD107.00 | TWD214.00 |
| 250 + | TWD104.50 | TWD209.00 |
* 參考價格
- RS庫存編號:
- 253-3509
- 製造零件編號:
- BIDW50N65T
- 製造商:
- Bourns
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Bourns | |
| Maximum Continuous Collector Current Ic | 100A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Package Type | TO-247 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V (Gate-Emitter Voltage VGE ) | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Bourns | ||
Maximum Continuous Collector Current Ic 100A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Package Type TO-247 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Maximum Gate Emitter Voltage VGEO ±20 V (Gate-Emitter Voltage VGE ) | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure provides a lower thermal resistance R(th).
650 V, 50 A, Low Collector-Emitter Saturation Voltage (VCE(sat))
Trench-Gate Field-Stop technology
Optimized for conduction
RoHS compliant