製造零件編號

Bourns BIDW50N65T Single Diode IGBT, 50 A 650 V TO-247

RS庫存編號:: 253-3508
製造零件編號:: BIDW50N65T
製造商:: Bourns

Bourns BIDW50N65T Single Diode IGBT, 50 A 650 V TO-247

小計（1 管，共 600 件）*

TWD62,820.00

(不含稅)

TWD65,964.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

600 件準備從其他地點送貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每管*
600 +	TWD104.70	TWD62,820.00

* 參考價格

RS庫存編號:: 253-3508
製造零件編號:: BIDW50N65T
製造商:: Bourns

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Bourns
	Maximum Continuous Collector Current	50 A
	Maximum Collector Emitter Voltage	650 V
	Maximum Gate Emitter Voltage	±20V
	Number of Transistors	1
	Maximum Power Dissipation	416 W
	Package Type	TO-247
	Configuration	Single Diode

	選取全部
	品牌 Bourns
	Maximum Continuous Collector Current 50 A
	Maximum Collector Emitter Voltage 650 V
	Maximum Gate Emitter Voltage ±20V
	Number of Transistors 1
	Maximum Power Dissipation 416 W
	Package Type TO-247
	Configuration Single Diode

Datasheet - BIDW50N65T

The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure provides a lower thermal resistance R(th).

650 V, 50 A, Low Collector-Emitter Saturation Voltage (VCE(sat))
Trench-Gate Field-Stop technology
Optimized for conduction
RoHS compliant

Bourns BIDW50N65T Single Diode IGBT, 50 A 650 V TO-247

訂單超過 $1,300.00 免費送貨

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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