STMicroelectronics IGBT, 80 A 650 V, 3-Pin TO-247
- RS庫存編號:
- 261-5071
- 製造零件編號:
- STGWA80H65DFBAG
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
TWD5,568.00
(不含稅)
TWD5,846.40
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年3月18日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 30 | TWD185.60 | TWD5,568.00 |
| 60 - 60 | TWD181.90 | TWD5,457.00 |
| 90 + | TWD178.30 | TWD5,349.00 |
* 參考價格
- RS庫存編號:
- 261-5071
- 製造零件編號:
- STGWA80H65DFBAG
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 80A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 535W | |
| Package Type | TO-247 | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 15V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 5mm | |
| Series | STGWA | |
| Length | 15.8mm | |
| Standards/Approvals | No | |
| Width | 21 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Maximum Continuous Collector Current Ic 80A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 535W | ||
Package Type TO-247 | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 15V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 175°C | ||
Height 5mm | ||
Series STGWA | ||
Length 15.8mm | ||
Standards/Approvals No | ||
Width 21 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics IGBT is developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
AEC-Q101 qualified
High-speed switching series
Maximum junction temperature TJ is 175 degree C
Minimized tail current
Tight parameter distribution
Positive temperature VCE(sat) coefficient
Soft and very fast recovery antiparallel diode
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