STMicroelectronics STGWA80H65DFBAG IGBT, 80 A 650 V, 3-Pin TO-247
- RS庫存編號:
- 261-5072
- 製造零件編號:
- STGWA80H65DFBAG
- 製造商:
- STMicroelectronics
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TWD202.00
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TWD212.10
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年3月18日 發貨
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|---|---|
| 1 - 4 | TWD202.00 |
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| 20 + | TWD174.00 |
* 參考價格
- RS庫存編號:
- 261-5072
- 製造零件編號:
- STGWA80H65DFBAG
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 80A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 535W | |
| Package Type | TO-247 | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 15V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.8mm | |
| Standards/Approvals | No | |
| Height | 5mm | |
| Series | STGWA | |
| Width | 21 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 80A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 535W | ||
Package Type TO-247 | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 15V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 175°C | ||
Length 15.8mm | ||
Standards/Approvals No | ||
Height 5mm | ||
Series STGWA | ||
Width 21 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics IGBT is developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
AEC-Q101 qualified
High-speed switching series
Maximum junction temperature TJ is 175 degree C
Minimized tail current
Tight parameter distribution
Positive temperature VCE(sat) coefficient
Soft and very fast recovery antiparallel diode
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