製造零件編號

Bourns BIDNW30N60H3 Single Diode IGBT, 30 A 600 V TO-247N

RS庫存編號:: 253-3503
製造零件編號:: BIDNW30N60H3
製造商:: Bourns

Bourns BIDNW30N60H3 Single Diode IGBT, 30 A 600 V TO-247N

可享批量折扣

小計（1 包，共 2 件）*

TWD210.00

(不含稅)

TWD220.50

訂單超過 $1,300.00 免費送貨

有庫存

2,294 件準備從其他地點送貨

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單位	每單位	每包*
2 - 8	TWD105.00	TWD210.00
10 - 48	TWD94.50	TWD189.00
50 - 98	TWD89.50	TWD179.00
100 - 248	TWD78.00	TWD156.00
250 +	TWD77.00	TWD154.00

* 參考價格

RS庫存編號:: 253-3503
製造零件編號:: BIDNW30N60H3
製造商:: Bourns

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Bourns
	Maximum Continuous Collector Current	30 A
	Maximum Collector Emitter Voltage	600 V
	Maximum Gate Emitter Voltage	±20V
	Number of Transistors	1
	Maximum Power Dissipation	230 W
	Package Type	TO-247N
	Configuration	Single Diode

	選取全部
	品牌 Bourns
	Maximum Continuous Collector Current 30 A
	Maximum Collector Emitter Voltage 600 V
	Maximum Gate Emitter Voltage ±20V
	Number of Transistors 1
	Maximum Power Dissipation 230 W
	Package Type TO-247N
	Configuration Single Diode

Datasheet - BIDNW30N60H3

The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses.

600 V, 30 A, Low Collector-Emitter Saturation Voltage (VCE(sat))
Trench-Gate Field-Stop technology
Low switching loss
Fast switching
RoHS compliant

Bourns BIDNW30N60H3 Single Diode IGBT, 30 A 600 V TO-247N

訂單超過 $1,300.00 免費送貨

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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