小計（1 管，共 600 件）*
TWD48,660.00
(不含稅)
TWD51,096.00
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每管* |
|---|---|---|
| 600 + | TWD81.10 | TWD48,660.00 |
* 參考價格
- RS庫存編號:
- 253-3506
- 製造零件編號:
- BIDW30N60T
- 製造商:
- Bourns
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Bourns | |
| Maximum Continuous Collector Current Ic | 60A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 230W | |
| Package Type | TO-247 | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS 2015/863, 2015 and Annex, Mar 31 | |
| Series | BIDW30N60T | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Bourns | ||
Maximum Continuous Collector Current Ic 60A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 230W | ||
Package Type TO-247 | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS 2015/863, 2015 and Annex, Mar 31 | ||
Series BIDW30N60T | ||
Automotive Standard No | ||
The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure gives a lower thermal resistance R(th).
600 V, 30 A, Low Collector-Emitter Saturation Voltage (VCE(sat))
Trench-Gate Field-Stop technology
Optimized for conduction
RoHS compliant
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