Infineon IKP28N65ES5XKSA1 Single IGBT, 38 A 650 V TO-220-3

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小計(1 包,共 2 件)*

TWD188.00

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TWD197.40

(含稅)

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2 - 8TWD94.00TWD188.00
10 - 98TWD92.00TWD184.00
100 - 248TWD89.00TWD178.00
250 - 498TWD87.50TWD175.00
500 +TWD85.00TWD170.00

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包裝方式:
RS庫存編號:
242-0980
製造零件編號:
IKP28N65ES5XKSA1
製造商:
Infineon
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品牌

Infineon

Maximum Continuous Collector Current

38 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

20V

Maximum Power Dissipation

130 W

Number of Transistors

1

Package Type

TO-220-3

Configuration

Single

The Infineon 650 V, 28 A IGBT with anti-parallel diode in TO-220 package.It has a high current density, high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.

High speed smooth switching device for hard & soft switching
175°C maximum junction temperature
No need for gate clamping components

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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