Infineon IGBT Single Transistor IC, 80 A 650 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 215-6610
- 製造零件編號:
- AIGW50N65F5XKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 管，共 30 件）*
TWD3,468.00
(不含稅)
TWD3,641.40
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年8月31日 發貨
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單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 60 | TWD115.60 | TWD3,468.00 |
| 90 - 120 | TWD111.00 | TWD3,330.00 |
| 150 + | TWD108.10 | TWD3,243.00 |
* 參考價格
- RS庫存編號:
- 215-6610
- 製造零件編號:
- AIGW50N65F5XKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Continuous Collector Current Ic | 80A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 270W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.66V | |
| Maximum Operating Temperature | 175°C | |
| Series | High Speed Fifth Generation | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT Single Transistor IC | ||
Maximum Continuous Collector Current Ic 80A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 270W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.66V | ||
Maximum Operating Temperature 175°C | ||
Series High Speed Fifth Generation | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
The Infineon three pin high speed fast insulated-gate bipolar transistor.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
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