製造零件編號

Infineon IGBT Single Transistor IC, 80 A 650 V, 3-Pin TO-247, Through Hole

RS庫存編號:: 215-6610
製造零件編號:: AIGW50N65F5XKSA1
製造商:: Infineon

Infineon IGBT Single Transistor IC, 80 A 650 V, 3-Pin TO-247, Through Hole

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 管，共 30 件）*

TWD3,303.00

(不含稅)

TWD3,468.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年6月11日發貨

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單位	每單位	每管*
30 - 60	TWD110.10	TWD3,303.00
90 - 120	TWD105.70	TWD3,171.00
150 +	TWD102.90	TWD3,087.00

* 參考價格

RS庫存編號:: 215-6610
製造零件編號:: AIGW50N65F5XKSA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Maximum Continuous Collector Current Ic	80A
	Product Type	IGBT Single Transistor IC
	Maximum Collector Emitter Voltage Vceo	650V
	Maximum Power Dissipation Pd	270W
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Minimum Operating Temperature	-40°C
	Maximum Gate Emitter Voltage VGEO	±30 V
	Maximum Collector Emitter Saturation Voltage VceSAT	1.66V
	Maximum Operating Temperature	175°C
	Standards/Approvals	AEC-Q101
	Series	High Speed Fifth Generation
	Automotive Standard	AEC-Q101

	選取全部
	品牌 Infineon
	Maximum Continuous Collector Current Ic 80A
	Product Type IGBT Single Transistor IC
	Maximum Collector Emitter Voltage Vceo 650V
	Maximum Power Dissipation Pd 270W
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Minimum Operating Temperature -40°C
	Maximum Gate Emitter Voltage VGEO ±30 V
	Maximum Collector Emitter Saturation Voltage VceSAT 1.66V
	Maximum Operating Temperature 175°C
	Standards/Approvals AEC-Q101
	Series High Speed Fifth Generation
	Automotive Standard AEC-Q101

Datasheet-AIGW50N65F5XKSA1

The Infineon three pin high speed fast insulated-gate bipolar transistor.

High Efficiency

Low Switching Losses

Increased Reliability

Low Electromagnetic Interference

Infineon IGBT Single Transistor IC, 80 A 650 V, 3-Pin TO-247, Through Hole

訂單超過 $1,300.00 免費送貨

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