Infineon, Type N-Channel IGBT Single Transistor IC, 85 A 650 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 226-6112
- 製造零件編號:
- IKW30N65EL5XKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
TWD2,295.00
(不含稅)
TWD2,409.60
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 570 件準備從其他地點送貨
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單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 120 | TWD76.50 | TWD2,295.00 |
| 150 + | TWD74.20 | TWD2,226.00 |
* 參考價格
- RS庫存編號:
- 226-6112
- 製造零件編號:
- IKW30N65EL5XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Continuous Collector Current Ic | 85A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 227W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Maximum Gate Emitter Voltage VGEO | 30 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 41.9mm | |
| Series | LowVCE(sat) Fifth Generation | |
| Standards/Approvals | JEDEC | |
| Height | 5.3mm | |
| Width | 16.3 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT Single Transistor IC | ||
Maximum Continuous Collector Current Ic 85A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 227W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Maximum Gate Emitter Voltage VGEO 30 V | ||
Maximum Operating Temperature 175°C | ||
Length 41.9mm | ||
Series LowVCE(sat) Fifth Generation | ||
Standards/Approvals JEDEC | ||
Height 5.3mm | ||
Width 16.3 mm | ||
Automotive Standard No | ||
The Infineon IKW30N65EL5 has 650V breakdown voltage used very low collector-emitter saturation voltage and higher efficiency for 50Hz. It has longer lifetime and higher reliability of IGBT.
Low gate charge QG
Maximum junction temperature 175°C
Qualified according to JEDEC for target applications
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