Infineon IKW30N65EL5XKSA1 Single IGBT, 85 A 650 V, 3-Pin PG-TO247

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小計(1 管,共 30 件)*

TWD2,295.00

(不含稅)

TWD2,409.60

(含稅)

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30 - 120TWD76.50TWD2,295.00
150 +TWD74.20TWD2,226.00

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RS庫存編號:
226-6112
製造零件編號:
IKW30N65EL5XKSA1
製造商:
Infineon
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品牌

Infineon

Maximum Continuous Collector Current

85 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

30V

Number of Transistors

1

Maximum Power Dissipation

227 W

Configuration

Single

Package Type

PG-TO247

Channel Type

N

Pin Count

3

The Infineon IKW30N65EL5 has 650V breakdown voltage used very low collector-emitter saturation voltage and higher efficiency for 50Hz. It has longer lifetime and higher reliability of IGBT.

Low gate charge QG
Maximum junction temperature 175°C
Qualified according to JEDEC for target applications

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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