Infineon IKW30N65EL5XKSA1 Single IGBT, 85 A 650 V, 3-Pin PG-TO247
- RS庫存編號:
- 226-6112
- 製造零件編號:
- IKW30N65EL5XKSA1
- 製造商:
- Infineon
可享批量折扣
小計(1 管,共 30 件)*
TWD2,295.00
(不含稅)
TWD2,409.60
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 570 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 120 | TWD76.50 | TWD2,295.00 |
| 150 + | TWD74.20 | TWD2,226.00 |
* 參考價格
- RS庫存編號:
- 226-6112
- 製造零件編號:
- IKW30N65EL5XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current | 85 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | 30V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 227 W | |
| Configuration | Single | |
| Package Type | PG-TO247 | |
| Channel Type | N | |
| Pin Count | 3 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current 85 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage 30V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 227 W | ||
Configuration Single | ||
Package Type PG-TO247 | ||
Channel Type N | ||
Pin Count 3 | ||
The Infineon IKW30N65EL5 has 650V breakdown voltage used very low collector-emitter saturation voltage and higher efficiency for 50Hz. It has longer lifetime and higher reliability of IGBT.
Low gate charge QG
Maximum junction temperature 175°C
Qualified according to JEDEC for target applications
Maximum junction temperature 175°C
Qualified according to JEDEC for target applications
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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