Infineon AIKW50N65RF5XKSA1 IGBT, 80 A 650 V, 3-Pin PG-TO247-3

可享批量折扣

小計(1 管,共 240 件)*

TWD48,072.00

(不含稅)

TWD50,476.80

(含稅)

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240 - 240TWD200.30TWD48,072.00
480 - 480TWD192.60TWD46,224.00
720 +TWD186.80TWD44,832.00

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RS庫存編號:
228-6508
製造零件編號:
AIKW50N65RF5XKSA1
製造商:
Infineon
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品牌

Infineon

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20.0V

Maximum Power Dissipation

250 W

Package Type

PG-TO247-3

Pin Count

3

Transistor Configuration

Single

The Infineon AIKW50N65RF5 is hybrid power discrete with SiC power technology with best cost-performance is the most important aspect for auxiliary applications in electric vehicles and hybrid vehicles. The hybrid of 650V TRENCHSTOP 5 AUTO fast switching IGBT and CoolSiC Schottky diode to enable a cost efficient performance boost for fast switching automotive applications such as on board charger, PFC, DC-DC and DC-AC.

Trenchstop 5 fast switching IGBT
Best in class efficiency in hard switching and resonant topologies
Low gate charge QG
Maximum junction temperature 175°C

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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