Infineon, Type N-Channel IGBT Single Transistor IC, 60 A 650 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 215-6637
- 製造零件編號:
- IHW30N65R5XKSA1
- 製造商:
- Infineon
可享批量折扣
小計（1 管，共 30 件）*
TWD1,509.00
(不含稅)
TWD1,584.60
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 240 件從 2026年3月23日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 60 | TWD50.30 | TWD1,509.00 |
| 90 - 120 | TWD48.30 | TWD1,449.00 |
| 150 + | TWD47.00 | TWD1,410.00 |
* 參考價格
- RS庫存編號:
- 215-6637
- 製造零件編號:
- IHW30N65R5XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 60A | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 176W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.7V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Series | Resonant Switching | |
| Width | 16.13 mm | |
| Length | 42mm | |
| Height | 5.21mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 60A | ||
Product Type IGBT Single Transistor IC | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 176W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.7V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Series Resonant Switching | ||
Width 16.13 mm | ||
Length 42mm | ||
Height 5.21mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon resonant switching series reverse conducting insulated-gate bipolar transistor with monolithic body diode.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
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