製造零件編號

Infineon IGBT Single Transistor IC, 28 A 650 V TO-220

RS庫存編號:: 242-0979
製造零件編號:: IKP28N65ES5XKSA1
製造商:: Infineon

Infineon IGBT Single Transistor IC, 28 A 650 V TO-220

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 管，共 500 件）*

TWD20,650.00

(不含稅)

TWD21,680.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年8月05日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每管*
500 - 500	TWD41.30	TWD20,650.00
1000 - 1000	TWD40.10	TWD20,050.00
1500 +	TWD38.90	TWD19,450.00

* 參考價格

RS庫存編號:: 242-0979
製造零件編號:: IKP28N65ES5XKSA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	IGBT Single Transistor IC
	Maximum Continuous Collector Current Ic	28A
	Maximum Collector Emitter Voltage Vceo	650V
	Maximum Power Dissipation Pd	130W
	Package Type	TO-220
	Minimum Operating Temperature	-40°C
	Maximum Gate Emitter Voltage VGEO	±20 ±30 V
	Maximum Collector Emitter Saturation Voltage VceSAT	1.9V
	Maximum Operating Temperature	175°C
	Standards/Approvals	JEDEC47/20/22
	Series	5th Generation
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type IGBT Single Transistor IC
	Maximum Continuous Collector Current Ic 28A
	Maximum Collector Emitter Voltage Vceo 650V
	Maximum Power Dissipation Pd 130W
	Package Type TO-220
	Minimum Operating Temperature -40°C
	Maximum Gate Emitter Voltage VGEO ±20 ±30 V
	Maximum Collector Emitter Saturation Voltage VceSAT 1.9V
	Maximum Operating Temperature 175°C
	Standards/Approvals JEDEC47/20/22
	Series 5th Generation
	Automotive Standard No

Datasheet - IKP28N65ES5XKSA1

The Infineon 650 V, 28 A IGBT with anti-parallel diode in TO-220 package.It has a high current density, high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.

High speed smooth switching device for hard & soft switching

175°C maximum junction temperature

No need for gate clamping components

Infineon IGBT Single Transistor IC, 28 A 650 V TO-220

訂單超過 $1,300.00 免費送貨

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