Infineon IGBT Single Transistor IC, 28 A 650 V TO-220

可享批量折扣

小計(1 管,共 500 件)*

TWD22,700.00

(不含稅)

TWD23,835.00

(含稅)

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  • 2026年9月07日 發貨
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單位
每單位
每管*
500 - 500TWD45.40TWD22,700.00
1000 - 1000TWD44.10TWD22,050.00
1500 +TWD42.80TWD21,400.00

* 參考價格

RS庫存編號:
242-0979
製造零件編號:
IKP28N65ES5XKSA1
製造商:
Infineon
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品牌

Infineon

Product Type

IGBT Single Transistor IC

Maximum Continuous Collector Current Ic

28A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

130W

Package Type

TO-220

Maximum Gate Emitter Voltage VGEO

±20 ±30 V

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.9V

Maximum Operating Temperature

175°C

Series

5th Generation

Standards/Approvals

JEDEC47/20/22

Automotive Standard

No

The Infineon 650 V, 28 A IGBT with anti-parallel diode in TO-220 package.It has a high current density, high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.

High speed smooth switching device for hard & soft switching

175°C maximum junction temperature

No need for gate clamping components

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