Infineon IKB40N65ES5ATMA1, Type N-Channel IGBT Single Transistor IC, 79 A 650 V, 3-Pin TO-263, Surface
- RS庫存編號:
- 215-6655
- 製造零件編號:
- IKB40N65ES5ATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 2 件）*
TWD215.00
(不含稅)
TWD225.76
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 4,256 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD107.50 | TWD215.00 |
| 10 - 98 | TWD105.00 | TWD210.00 |
| 100 - 248 | TWD102.00 | TWD204.00 |
| 250 - 498 | TWD99.50 | TWD199.00 |
| 500 + | TWD92.50 | TWD185.00 |
* 參考價格
- RS庫存編號:
- 215-6655
- 製造零件編號:
- IKB40N65ES5ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Continuous Collector Current Ic | 79A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 230W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.35V | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Series | High Speed Fifth Generation | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT Single Transistor IC | ||
Maximum Continuous Collector Current Ic 79A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 230W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.35V | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Series High Speed Fifth Generation | ||
Automotive Standard No | ||
The Infineon high speed switching series fifth generation insulated-gate bipolar transistor.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
相關連結
- Infineon 79 A 650 V Surface
- Infineon 74 A 650 V Surface
- Infineon 30 A 650 V Surface
- Infineon IKB40N65EF5ATMA1 74 A 650 V Surface
- Infineon IKB15N65EH5ATMA1 30 A 650 V Surface
- Infineon IGBT Single Transistor IC, 28 A 650 V TO-220
- Infineon IKP28N65ES5XKSA1 IGBT Single Transistor IC, 28 A 650 V TO-220
- Infineon IGBT Single Transistor IC 3-Pin PG-TO-247