Infineon IKW20N60TFKSA1, Type N-Channel IGBT, 41 A 600 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 215-6670
- Distrelec 貨號:
- 304-31-964
- 製造零件編號:
- IKW20N60TFKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD554.00
(不含稅)
TWD581.70
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 225 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD110.80 | TWD554.00 |
| 10 - 95 | TWD108.00 | TWD540.00 |
| 100 - 245 | TWD105.40 | TWD527.00 |
| 250 - 495 | TWD102.60 | TWD513.00 |
| 500 + | TWD95.20 | TWD476.00 |
* 參考價格
- RS庫存編號:
- 215-6670
- Distrelec 貨號:
- 304-31-964
- 製造零件編號:
- IKW20N60TFKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 41A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 166W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC1 | |
| Height | 5.21mm | |
| Width | 16.13 mm | |
| Length | 41.42mm | |
| Series | TRENCHSTOPTM | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 41A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 166W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC1 | ||
Height 5.21mm | ||
Width 16.13 mm | ||
Length 41.42mm | ||
Series TRENCHSTOPTM | ||
Automotive Standard No | ||
The Infineon low loss duopack insulated-gate bipolar transistor in trenchstop and fieldstop technology.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference