Infineon IKW40N60H3FKSA1 IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 897-7208
- 製造零件編號:
- IKW40N60H3FKSA1
- 製造商:
- Infineon
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小計（1 包，共 2 件）*
TWD276.00
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TWD289.80
(含稅)
訂單超過 $1,300.00 免費送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 6 | TWD138.00 | TWD276.00 |
| 8 - 14 | TWD134.00 | TWD268.00 |
| 16 + | TWD132.50 | TWD265.00 |
* 參考價格
- RS庫存編號:
- 897-7208
- 製造零件編號:
- IKW40N60H3FKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current | 80 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 306 W | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 16.13 x 5.21 x 21.1mm | |
| Energy Rating | 2.12mJ | |
| Gate Capacitance | 2190pF | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -40 °C | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current 80 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 306 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 16.13 x 5.21 x 21.1mm | ||
Energy Rating 2.12mJ | ||
Gate Capacitance 2190pF | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -40 °C | ||
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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