Infineon IKW75N60TFKSA1 IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole

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RS庫存編號:
911-4789
製造零件編號:
IKW75N60TFKSA1
製造商:
Infineon
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品牌

Infineon

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

428 W

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Dimensions

16.03 x 21.1 x 5.16mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-40 °C

COO (Country of Origin):
GB

Infineon IGBT, 80A Maximum Continuous Collector Current, 600V Maximum Collector Emitter Voltage - IKW75N60TFKSA1


This IGBT is a high-performance semiconductor component designed for power electronics applications. With a maximum continuous collector current of 80A, it operates efficiently in high-voltage environments, rated for 600V. The device is packaged in a TO-247 format, ideal for through-hole mounting.

Features & Benefits


• Low collector-emitter saturation voltage enhances efficiency
• High switching speed reduces energy loss during operation
• Positive temperature coefficient ensures stable performance
• Compatible with a wide temperature range from -40°C to +175°C

Applications


• Suitable for use in frequency converters in industrial settings
• Ideal for uninterruptible power supply systems
• Utilised in motor control for automation
• Effective for renewable energy systems to ensure efficiency

What are the implications of short circuit withstand time for my application?


The short circuit withstand time of 5μs allows for reliable protection in applications that may encounter fault conditions, ensuring that the device can endure brief overcurrent situations without immediate failure.

How does the high switching speed impact system efficiency?


A high switching speed of 20kHz minimises energy losses during transitions, significantly improving overall system efficiency and performance, particularly in fast-response applications.

What are the thermal management considerations for optimal performance?


Thermal resistance values indicate effective heat dissipation from junction to case

managing junction temperatures within specified limits is crucial to maintain reliable operation and extend component lifespan.

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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