Infineon IGW75N60H3FKSA1, Type N-Channel IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole

RS庫存編號:: 110-7445
製造零件編號:: IGW75N60H3FKSA1
製造商:: Infineon

Infineon IGW75N60H3FKSA1, Type N-Channel IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 包，共 2 件）*

TWD357.00

(不含稅)

TWD374.84

訂單超過 $1,300.00 免費送貨

有限的庫存

加上 1,180 件從 2026年3月16日起發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每包*
2 - 6	TWD178.50	TWD357.00
8 +	TWD165.00	TWD330.00

* 參考價格

RS庫存編號:: 110-7445
製造零件編號:: IGW75N60H3FKSA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	IGBT
	Maximum Continuous Collector Current Ic	75A
	Maximum Collector Emitter Voltage Vceo	600V
	Maximum Power Dissipation Pd	428W
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	Type N
	Pin Count	3
	Maximum Collector Emitter Saturation Voltage VceSAT	2.3V
	Maximum Gate Emitter Voltage VGEO	±20 V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	175°C
	Width	15.7 mm
	Standards/Approvals	JEDEC, RoHS
	Height	40.6mm
	Energy Rating	6.2mJ
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type IGBT
	Maximum Continuous Collector Current Ic 75A
	Maximum Collector Emitter Voltage Vceo 600V
	Maximum Power Dissipation Pd 428W
	Package Type TO-247
	Mount Type Through Hole
	Channel Type Type N
	Pin Count 3
	Maximum Collector Emitter Saturation Voltage VceSAT 2.3V
	Maximum Gate Emitter Voltage VGEO ±20 V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 175°C
	Width 15.7 mm
	Standards/Approvals JEDEC, RoHS
	Height 40.6mm
	Energy Rating 6.2mJ
	Automotive Standard No

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V

• Very low VCEsat

• Low turn-off losses

• Short tail current

• Low EMI

• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Infineon IGW75N60H3FKSA1, Type N-Channel IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole

訂單超過 $1,300.00 免費送貨

Infineon TrenchStop IGBT Transistors, 600 and 650V

IGBT Discretes & Modules, Infineon

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