Infineon, Type N-Channel IGBT, 41 A 600 V, 3-Pin TO-220, Through Hole

RS庫存編號:: 170-2371
製造零件編號:: IKP20N60TXKSA1
製造商:: Infineon

Infineon, Type N-Channel IGBT, 41 A 600 V, 3-Pin TO-220, Through Hole

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可享批量折扣

小計（1 包，共 10 件）*

TWD474.00

(不含稅)

TWD497.70

訂單超過 $1,300.00 免費送貨

有庫存

2,460 件準備從其他地點送貨

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單位	每單位	每包*
10 - 10	TWD47.40	TWD474.00
20 - 20	TWD46.20	TWD462.00
30 +	TWD43.10	TWD431.00

* 參考價格

RS庫存編號:: 170-2371
製造零件編號:: IKP20N60TXKSA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	IGBT
	Maximum Continuous Collector Current Ic	41A
	Maximum Collector Emitter Voltage Vceo	600V
	Maximum Power Dissipation Pd	166W
	Package Type	TO-220
	Mount Type	Through Hole
	Channel Type	Type N
	Pin Count	3
	Minimum Operating Temperature	-40°C
	Maximum Gate Emitter Voltage VGEO	20 V
	Maximum Collector Emitter Saturation Voltage VceSAT	2.05V
	Maximum Operating Temperature	175°C
	Series	TrenchStop
	Standards/Approvals	Pb-Free, JEDEC, RoHS
	Energy Rating	0.77mJ
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type IGBT
	Maximum Continuous Collector Current Ic 41A
	Maximum Collector Emitter Voltage Vceo 600V
	Maximum Power Dissipation Pd 166W
	Package Type TO-220
	Mount Type Through Hole
	Channel Type Type N
	Pin Count 3
	Minimum Operating Temperature -40°C
	Maximum Gate Emitter Voltage VGEO 20 V
	Maximum Collector Emitter Saturation Voltage VceSAT 2.05V
	Maximum Operating Temperature 175°C
	Series TrenchStop
	Standards/Approvals Pb-Free, JEDEC, RoHS
	Energy Rating 0.77mJ
	Automotive Standard No

Infineon's TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses

Lowest V ce(sat) drop for lower conduction losses

Low switching losses

Easy parallel switching capability due to positive temperature coefficient in V ce(sat)

Very soft, fast recovery anti-parallel Emitter Controlled Diode

High ruggedness, temperature stable behavior

Low EMI emissions

Low gate charge

Very tight parameter distribution

Benefits:

Highest efficiency – low conduction and switching losses

Comprehensive portfolio in 600V and 1200V for flexibility of design

High device reliability

Target Applications:

UPS

Solar Inverters

Major Home Appliances

Welding

Air conditioning

Industrial Drives

Other hard switching applications

Infineon, Type N-Channel IGBT, 41 A 600 V, 3-Pin TO-220, Through Hole

訂單超過 $1,300.00 免費送貨

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