Infineon, Type N-Channel IGBT, 12 A 600 V, 3-Pin TO-220, Surface
- RS庫存編號:
- 273-2959
- 製造零件編號:
- IGP06N60TXKSA1
- 製造商:
- Infineon
可享批量折扣
小計（1 包，共 2 件）*
TWD81.00
(不含稅)
TWD85.04
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 290 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD40.50 | TWD81.00 |
| 10 - 18 | TWD35.00 | TWD70.00 |
| 20 - 98 | TWD34.00 | TWD68.00 |
| 100 - 498 | TWD28.00 | TWD56.00 |
| 500 + | TWD23.00 | TWD46.00 |
* 參考價格
- RS庫存編號:
- 273-2959
- 製造零件編號:
- IGP06N60TXKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 12A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 88W | |
| Package Type | TO-220 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.05V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 15.95mm | |
| Height | 4.57mm | |
| Series | TrenchStop | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 12A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 88W | ||
Package Type TO-220 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.05V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 15.95mm | ||
Height 4.57mm | ||
Series TrenchStop | ||
Automotive Standard No | ||
The Infineon IGBT3 in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode fu
High ruggedness and temperature stable behaviour
High device reliability
Very tight parameter distribution
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