Infineon, Type N-Channel IGBT, 12 A 600 V, 3-Pin TO-220, Surface
- RS庫存編號:
- 273-2959
- 製造零件編號:
- IGP06N60TXKSA1
- 製造商:
- Infineon
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TWD81.00
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TWD85.04
(含稅)
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD40.50 | TWD81.00 |
| 10 - 18 | TWD35.00 | TWD70.00 |
| 20 - 98 | TWD34.00 | TWD68.00 |
| 100 - 498 | TWD28.00 | TWD56.00 |
| 500 + | TWD23.00 | TWD46.00 |
* 參考價格
- RS庫存編號:
- 273-2959
- 製造零件編號:
- IGP06N60TXKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 12A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 88W | |
| Package Type | TO-220 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.05V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.95mm | |
| Width | 10.36 mm | |
| Standards/Approvals | RoHS | |
| Series | TrenchStop | |
| Height | 4.57mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 12A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 88W | ||
Package Type TO-220 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.05V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 15.95mm | ||
Width 10.36 mm | ||
Standards/Approvals RoHS | ||
Series TrenchStop | ||
Height 4.57mm | ||
Automotive Standard No | ||
The Infineon IGBT3 in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode fu
High ruggedness and temperature stable behaviour
High device reliability
Very tight parameter distribution