Infineon, Type N-Channel IGBT, 12 A 600 V, 3-Pin TO-263, Through Hole
- RS庫存編號:
- 273-2968
- 製造零件編號:
- IKB06N60TATMA1
- 製造商:
- Infineon
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TWD111.30
(含稅)
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|---|---|---|
| 2 - 48 | TWD53.00 | TWD106.00 |
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| 500 + | TWD29.00 | TWD58.00 |
* 參考價格
- RS庫存編號:
- 273-2968
- 製造零件編號:
- IKB06N60TATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 12A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 88W | |
| Package Type | TO-263 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.05V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.57mm | |
| Length | 9.45mm | |
| Standards/Approvals | Pb-free lead plating, J-STD-020, RoHS, JEDEC, JESD-022 | |
| Width | 10.31 mm | |
| Series | TrenchStop | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 12A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 88W | ||
Package Type TO-263 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.05V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Height 4.57mm | ||
Length 9.45mm | ||
Standards/Approvals Pb-free lead plating, J-STD-020, RoHS, JEDEC, JESD-022 | ||
Width 10.31 mm | ||
Series TrenchStop | ||
Automotive Standard No | ||
The Infineon IGBT3 compacted with full-rated free-wheeling diode in a TO263 D2Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of
High ruggedness and temperature stable behaviour
Very tight parameter distribution
High device reliability