Infineon, Type N-Channel IGBT Single Transistor IC, 90 A 600 V, 3-Pin TO-263, Surface
- RS庫存編號:
- 215-6629
- 製造零件編號:
- IGB50N60TATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 1000 件）*
TWD60,000.00
(不含稅)
TWD63,000.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 3,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 1000 - 1000 | TWD60.00 | TWD60,000.00 |
| 2000 - 2000 | TWD58.80 | TWD58,800.00 |
| 3000 + | TWD57.60 | TWD57,600.00 |
* 參考價格
- RS庫存編號:
- 215-6629
- 製造零件編號:
- IGB50N60TATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 90A | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 333W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, JEDEC1 | |
| Series | TRENCHSTOPTM | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 90A | ||
Product Type IGBT Single Transistor IC | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 333W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, JEDEC1 | ||
Series TRENCHSTOPTM | ||
Automotive Standard No | ||
The Infineon low loss insulated-gate bipolar transistor in trenchstop and fieldstop technology.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference