Infineon IGB50N60TATMA1 IGBT, 90 A 600 V, 3-Pin PG-TO263-3
- RS庫存編號:
- 215-6629
- 製造零件編號:
- IGB50N60TATMA1
- 製造商:
- Infineon
可享批量折扣
小計(1 卷,共 1000 件)*
TWD60,000.00
(不含稅)
TWD63,000.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 3,000 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 1000 - 1000 | TWD60.00 | TWD60,000.00 |
| 2000 - 2000 | TWD58.80 | TWD58,800.00 |
| 3000 + | TWD57.60 | TWD57,600.00 |
* 參考價格
- RS庫存編號:
- 215-6629
- 製造零件編號:
- IGB50N60TATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current | 90 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 333 W | |
| Package Type | PG-TO263-3 | |
| Pin Count | 3 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current 90 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 333 W | ||
Package Type PG-TO263-3 | ||
Pin Count 3 | ||
The Infineon low loss insulated-gate bipolar transistor in trenchstop and fieldstop technology.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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