Infineon AIKW50N60CTXKSA1, Type N-Channel IGBT Single Transistor IC, 80 A 600 V, 3-Pin TO-263, Through Hole
- RS庫存編號:
- 215-6620
- 製造零件編號:
- AIKW50N60CTXKSA1
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 包,共 2 件)*
TWD510.00
(不含稅)
TWD535.50
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 1,166 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD255.00 | TWD510.00 |
| 10 - 98 | TWD248.50 | TWD497.00 |
| 100 - 248 | TWD242.50 | TWD485.00 |
| 250 - 498 | TWD236.00 | TWD472.00 |
| 500 + | TWD230.00 | TWD460.00 |
* 參考價格
- RS庫存編號:
- 215-6620
- 製造零件編號:
- AIKW50N60CTXKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Continuous Collector Current Ic | 80A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 250W | |
| Package Type | TO-263 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Width | 16.13 mm | |
| Length | 42mm | |
| Height | 5.21mm | |
| Standards/Approvals | No | |
| Series | TRENCHSTOPTM | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT Single Transistor IC | ||
Maximum Continuous Collector Current Ic 80A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 250W | ||
Package Type TO-263 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Maximum Operating Temperature 175°C | ||
Width 16.13 mm | ||
Length 42mm | ||
Height 5.21mm | ||
Standards/Approvals No | ||
Series TRENCHSTOPTM | ||
Automotive Standard AEC-Q101 | ||
The Infineon fieldstop technology insulated-gate bipolar transistor with soft fast recovery anti parallel emitter controlled diode.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
相關連結
- Infineon 80 A 600 V Through Hole
- Infineon 90 A 600 V Surface
- Infineon 26 A 600 V Surface
- Infineon IGB50N60TATMA1 90 A 600 V Surface
- Infineon IGB15N60TATMA1 26 A 600 V Surface
- Infineon IGBT Single Transistor IC, 4 A 600 V PG-SOT223
- Infineon IKN04N60RC2ATMA1 IGBT Single Transistor IC, 4 A 600 V PG-SOT223
- Infineon 79 A 650 V Surface
