Infineon IKN04N60RC2ATMA1 IGBT Single Transistor IC, 4 A 600 V PG-SOT223
- RS庫存編號:
- 240-8531
- 製造零件編號:
- IKN04N60RC2ATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD101.00
(不含稅)
TWD106.05
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD20.20 | TWD101.00 |
| 10 - 95 | TWD19.80 | TWD99.00 |
| 100 - 245 | TWD19.20 | TWD96.00 |
| 250 - 495 | TWD18.80 | TWD94.00 |
| 500 + | TWD18.00 | TWD90.00 |
* 參考價格
- RS庫存編號:
- 240-8531
- 製造零件編號:
- IKN04N60RC2ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 4A | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 6.8W | |
| Package Type | PG-SOT223 | |
| Switching Speed | 20kHz | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 4A | ||
Product Type IGBT Single Transistor IC | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 6.8W | ||
Package Type PG-SOT223 | ||
Switching Speed 20kHz | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.3V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon RC Drives 2 600 V, 1 A IGBT Discrete in PG- SOT-223 package. The RC-D2 with the monolithically integrated diode offers improvements of the performance, controllability and reliability compared to the RC-DF. It provides low switching loses on competitive price and is asy to design in products – drop in SMD replacement in DPAK and SOT-223 with high system reliability.
Improved controllability
Operating range of 1 to 20 kHz
Humidity robust design
Maximum junction temperature 150°C
Short circuit capability of 3 μs
Very tight parameter distribution
Pb free lead plating, RoHs compliant
Complete product spectrum and SPICE models
相關連結
- Infineon IGBT Single Transistor IC, 4 A 600 V PG-SOT223
- Infineon IGBT Single Transistor IC 3-Pin PG-TO-247
- Infineon IGBT Single Transistor IC 3-Pin PG-TO-247
- Infineon IHW20N120R5XKSA1 IGBT Single Transistor IC 3-Pin PG-TO-247
- Infineon IKW75N65RH5XKSA1 IGBT Single Transistor IC 3-Pin PG-TO-247
- Infineon IGBT Single Transistor IC, 28 A 650 V TO-220
- Infineon IKP28N65ES5XKSA1 IGBT Single Transistor IC, 28 A 650 V TO-220
- Infineon 1 A 600 V, 3-Pin PG-SOT223