Infineon IGB10N60TATMA1 IGBT, 10 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount

RS庫存編號:: 826-9055
製造零件編號:: IGB10N60TATMA1
製造商:: Infineon

Infineon IGB10N60TATMA1 IGBT, 10 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount

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可享批量折扣

小計（1 包，共 20 件）*

TWD602.00

(不含稅)

TWD632.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

600 件從 2026年2月02日起裝運發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每包*
20 - 240	TWD30.10	TWD602.00
260 - 480	TWD29.30	TWD586.00
500 +	TWD28.90	TWD578.00

* 參考價格

RS庫存編號:: 826-9055
製造零件編號:: IGB10N60TATMA1
製造商:: Infineon

規格

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Maximum Continuous Collector Current	10 A
	Maximum Collector Emitter Voltage	600 V
	Maximum Gate Emitter Voltage	±20V
	Maximum Power Dissipation	110 W
	Package Type	D2PAK (TO-263)
	Mounting Type	Surface Mount
	Channel Type	N
	Pin Count	3
	Switching Speed	1MHz
	Transistor Configuration	Single
	Dimensions	10.31 x 9.45 x 4.57mm
	Maximum Operating Temperature	+175 °C
	Minimum Operating Temperature	-40 °C

	選取全部
	品牌 Infineon
	Maximum Continuous Collector Current 10 A
	Maximum Collector Emitter Voltage 600 V
	Maximum Gate Emitter Voltage ±20V
	Maximum Power Dissipation 110 W
	Package Type D2PAK (TO-263)
	Mounting Type Surface Mount
	Channel Type N
	Pin Count 3
	Switching Speed 1MHz
	Transistor Configuration Single
	Dimensions 10.31 x 9.45 x 4.57mm
	Maximum Operating Temperature +175 °C
	Minimum Operating Temperature -40 °C

不適用

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Infineon IGB10N60TATMA1 IGBT, 10 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount

訂單超過 $1,300.00 免費送貨

Infineon TrenchStop IGBT Transistors, 600 and 650V

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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