Infineon IKP15N60TXKSA1 IGBT, 26 A 600 V, 3-Pin TO-220, Through Hole

RS庫存編號:: 110-7783
製造零件編號:: IKP15N60TXKSA1
製造商:: Infineon

Infineon IKP15N60TXKSA1 IGBT, 26 A 600 V, 3-Pin TO-220, Through Hole

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小計（1 包，共 10 件）*

TWD341.00

(不含稅)

TWD358.00

訂單超過 $1,300.00 免費送貨

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單位	每單位	每包*
10 - 10	TWD34.10	TWD341.00
20 - 20	TWD33.40	TWD334.00
30 +	TWD32.80	TWD328.00

* 參考價格

RS庫存編號:: 110-7783
製造零件編號:: IKP15N60TXKSA1
製造商:: Infineon

規格

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Maximum Continuous Collector Current	26 A
	Maximum Collector Emitter Voltage	600 V
	Maximum Gate Emitter Voltage	±20V
	Maximum Power Dissipation	130 W
	Package Type	TO-220
	Mounting Type	Through Hole
	Channel Type	N
	Pin Count	3
	Transistor Configuration	Single
	Dimensions	10.36 x 4.57 x 15.95mm
	Minimum Operating Temperature	-40 °C
	Gate Capacitance	860pF
	Energy Rating	0.81mJ
	Maximum Operating Temperature	+175 °C

	選取全部
	品牌 Infineon
	Maximum Continuous Collector Current 26 A
	Maximum Collector Emitter Voltage 600 V
	Maximum Gate Emitter Voltage ±20V
	Maximum Power Dissipation 130 W
	Package Type TO-220
	Mounting Type Through Hole
	Channel Type N
	Pin Count 3
	Transistor Configuration Single
	Dimensions 10.36 x 4.57 x 15.95mm
	Minimum Operating Temperature -40 °C
	Gate Capacitance 860pF
	Energy Rating 0.81mJ
	Maximum Operating Temperature +175 °C

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Infineon IKP15N60TXKSA1 IGBT, 26 A 600 V, 3-Pin TO-220, Through Hole

訂單超過 $1,300.00 免費送貨

Infineon TrenchStop IGBT Transistors, 600 and 650V

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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