Infineon IKW50N60H3FKSA1 IGBT, 100 A 600 V, 3-Pin TO-247, Through Hole

RS庫存編號:: 897-7239
製造零件編號:: IKW50N60H3FKSA1
製造商:: Infineon

Infineon IKW50N60H3FKSA1 IGBT, 100 A 600 V, 3-Pin TO-247, Through Hole

可享批量折扣

小計（1 包，共 2 件）*

TWD280.00

(不含稅)

TWD294.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年1月13日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每包*
2 - 6	TWD140.00	TWD280.00
8 - 14	TWD136.50	TWD273.00
16 +	TWD127.50	TWD255.00

* 參考價格

RS庫存編號:: 897-7239
製造零件編號:: IKW50N60H3FKSA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Maximum Continuous Collector Current	100 A
	Maximum Collector Emitter Voltage	600 V
	Maximum Gate Emitter Voltage	±20V
	Maximum Power Dissipation	333 W
	Package Type	TO-247
	Mounting Type	Through Hole
	Channel Type	N
	Pin Count	3
	Transistor Configuration	Single
	Dimensions	16.13 x 5.21 x 21.1mm
	Gate Capacitance	2960pF
	Energy Rating	2.55mJ
	Maximum Operating Temperature	+175 °C
	Minimum Operating Temperature	-40 °C

	選取全部
	品牌 Infineon
	Maximum Continuous Collector Current 100 A
	Maximum Collector Emitter Voltage 600 V
	Maximum Gate Emitter Voltage ±20V
	Maximum Power Dissipation 333 W
	Package Type TO-247
	Mounting Type Through Hole
	Channel Type N
	Pin Count 3
	Transistor Configuration Single
	Dimensions 16.13 x 5.21 x 21.1mm
	Gate Capacitance 2960pF
	Energy Rating 2.55mJ
	Maximum Operating Temperature +175 °C
	Minimum Operating Temperature -40 °C

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Infineon IKW50N60H3FKSA1 IGBT, 100 A 600 V, 3-Pin TO-247, Through Hole

訂單超過 $1,300.00 免費送貨

Infineon TrenchStop IGBT Transistors, 600 and 650V

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

相關連結