Infineon IKW30N60TFKSA1 IGBT, 45 A 600 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 124-8809
- 製造零件編號:
- IKW30N60TFKSA1
- 製造商:
- Infineon
可享批量折扣
小計（1 管，共 30 件）*
TWD2,154.00
(不含稅)
TWD2,261.70
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 90 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 120 | TWD71.80 | TWD2,154.00 |
| 150 + | TWD61.40 | TWD1,842.00 |
* 參考價格
- RS庫存編號:
- 124-8809
- 製造零件編號:
- IKW30N60TFKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current | 45 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 187 W | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 16.13 x 5.21 x 21.1mm | |
| Gate Capacitance | 1630pF | |
| Maximum Operating Temperature | +175 °C | |
| Energy Rating | 2.1mJ | |
| Minimum Operating Temperature | -40 °C | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current 45 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 187 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 16.13 x 5.21 x 21.1mm | ||
Gate Capacitance 1630pF | ||
Maximum Operating Temperature +175 °C | ||
Energy Rating 2.1mJ | ||
Minimum Operating Temperature -40 °C | ||
- COO (Country of Origin):
- CN
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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