Infineon, Type N-Channel IGBT, 160 A 600 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 215-6664
- 製造零件編號:
- IKQ100N60TXKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
TWD5,124.00
(不含稅)
TWD5,380.20
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 60 件從 2026年3月23日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 60 | TWD170.80 | TWD5,124.00 |
| 90 - 120 | TWD167.40 | TWD5,022.00 |
| 150 + | TWD164.00 | TWD4,920.00 |
* 參考價格
- RS庫存編號:
- 215-6664
- 製造零件編號:
- IKQ100N60TXKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 160A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 714W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 41.2mm | |
| Width | 15.9 mm | |
| Standards/Approvals | No | |
| Series | TrenchStop | |
| Height | 5.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 160A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 714W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 175°C | ||
Length 41.2mm | ||
Width 15.9 mm | ||
Standards/Approvals No | ||
Series TrenchStop | ||
Height 5.1mm | ||
Automotive Standard No | ||
The Infineon insulated-gate bipolar transistor with positive temperature coefficient in saturation voltage has fast recovery anti-parallel emitter controlled diode.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference