Infineon, Type N-Channel IGBT Single Transistor IC, 160 A 600 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 226-6108
- 製造零件編號:
- IKQ120N60TXKSA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 管，共 30 件）*
TWD7,479.00
(不含稅)
TWD7,852.80
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年10月30日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 120 | TWD249.30 | TWD7,479.00 |
| 150 + | TWD241.80 | TWD7,254.00 |
* 參考價格
- RS庫存編號:
- 226-6108
- 製造零件編號:
- IKQ120N60TXKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 160A | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 833W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Series | TrenchStop | |
| Length | 41.2mm | |
| Standards/Approvals | No | |
| Height | 5.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 160A | ||
Product Type IGBT Single Transistor IC | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 833W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Series TrenchStop | ||
Length 41.2mm | ||
Standards/Approvals No | ||
Height 5.1mm | ||
Automotive Standard No | ||
The Infineon IKQ120N60T has 600 V hard switching IGBT discrete with anti-parallel diode used higher system power density Ic which increase keeping the same system thermal performance and It has higher reliability with extended lifetime of the device.
35% bigger active thermal pad area for up to 20% lower thermal resistance R th(jh)
Extended creepage distance of 4.25 mm – 2 mm bigger than TO-247
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