IXYS IXXH80N65B4H1 IGBT, 430 A 650 V, 3-Pin TO-247AD, Through Hole
- RS庫存編號:
- 125-8049
- 製造零件編號:
- IXXH80N65B4H1
- 製造商:
- IXYS
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 件）*
TWD440.00
(不含稅)
TWD462.00
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 1 個，準備發貨
單位 | 每單位 |
|---|---|
| 1 - 7 | TWD440.00 |
| 8 - 14 | TWD430.00 |
| 15 + | TWD424.00 |
* 參考價格
- RS庫存編號:
- 125-8049
- 製造零件編號:
- IXXH80N65B4H1
- 製造商:
- IXYS
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | IXYS | |
| Maximum Continuous Collector Current | 430 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 625 W | |
| Number of Transistors | 1 | |
| Package Type | TO-247AD | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 5 → 30kHz | |
| Transistor Configuration | Single | |
| Dimensions | 16.1 x 5.2 x 21.3mm | |
| Energy Rating | 5.2mJ | |
| Minimum Operating Temperature | -55 °C | |
| Maximum Operating Temperature | +175 °C | |
| 選取全部 | ||
|---|---|---|
品牌 IXYS | ||
Maximum Continuous Collector Current 430 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 625 W | ||
Number of Transistors 1 | ||
Package Type TO-247AD | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 5 → 30kHz | ||
Transistor Configuration Single | ||
Dimensions 16.1 x 5.2 x 21.3mm | ||
Energy Rating 5.2mJ | ||
Minimum Operating Temperature -55 °C | ||
Maximum Operating Temperature +175 °C | ||
- COO (Country of Origin):
- PH
IGBT Discretes, IXYS
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
相關連結
- IXYS IXGH32N170 IGBT 3-Pin TO-247AD, Through Hole
- IXYS IXGH6N170 IGBT 3-Pin TO-247AD, Through Hole
- IXYS IXGH24N170 IGBT 3-Pin TO-247AD, Through Hole
- IXYS IXGH16N170 IGBT 3-Pin TO-247AD, Through Hole
- IXYS IXXK110N65B4H1 IGBT 3-Pin TO-264, Through Hole
- Infineon AUIRGP4063D-E IGBT 3-Pin TO-247AD, Through Hole
- IXYS Diode, 2-Pin TO-247AD DSEP30-06A
- IXYS MIXA450PF1200TSF Dual IGBT Module 11-Pin SimBus F, PCB Mount