IXYS IXYH30N170C, Type N-Channel IGBT, 100 A 1700 V, 3-Pin TO-247AD, Through Hole
- RS庫存編號:
- 146-4252
- 製造零件編號:
- IXYH30N170C
- 製造商:
- IXYS
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
TWD13,959.00
(不含稅)
TWD14,656.80
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 30 | TWD465.30 | TWD13,959.00 |
| 60 - 90 | TWD451.40 | TWD13,542.00 |
| 120 + | TWD437.80 | TWD13,134.00 |
* 參考價格
- RS庫存編號:
- 146-4252
- 製造零件編號:
- IXYH30N170C
- 製造商:
- IXYS
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | IXYS | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 100A | |
| Maximum Collector Emitter Voltage Vceo | 1700V | |
| Maximum Power Dissipation Pd | 937W | |
| Package Type | TO-247AD | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 4V | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Series | High Voltage | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 IXYS | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 100A | ||
Maximum Collector Emitter Voltage Vceo 1700V | ||
Maximum Power Dissipation Pd 937W | ||
Package Type TO-247AD | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 4V | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Series High Voltage | ||
Automotive Standard No | ||
IXYS XPT (eXtreme-light Punch Through) IGBTs with current ratings ranging from 29A to 178A, are well-suited for high-voltage, high-speed power conversion applications. Designed using the proprietary thin-wafer XPT technology and the state-of-the-art IGBT process, these devices display such qualities as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Also, thanks to the positive temperature coefficient of their on-state voltage, the new high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage device ones.
Thin wafer XPT technology
Low on-state voltages VCE(sat)
Co-packed fast recovery diodes
Positive temperature coefficient of VCE(sat)
High efficiency
Increased reliability of power systems
Applications
Pulser circuits
Laser and X-ray generators
High-voltage power supplies
High-voltage test equipment
Capacitor discharge circuits
AC switches