IXYS IXGH16N170, Type N-Channel IGBT, 32 A 1700 V, 3-Pin TO-247AD, Through Hole
- RS庫存編號:
- 194-776
- Distrelec 貨號:
- 302-53-412
- 製造零件編號:
- IXGH16N170
- 製造商:
- IXYS
此圖片僅供參考，請參閲產品詳細資訊及規格
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小計（1 件）*
TWD312.00
(不含稅)
TWD327.60
(含稅)
訂單超過 $1,300.00 免費送貨
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- 1 件準備從其他地點送貨
- 加上 356 件從 2026年3月27日 起發貨
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單位 | 每單位 |
|---|---|
| 1 - 7 | TWD312.00 |
| 8 - 14 | TWD305.00 |
| 15 + | TWD299.00 |
* 參考價格
- RS庫存編號:
- 194-776
- Distrelec 貨號:
- 302-53-412
- 製造零件編號:
- IXGH16N170
- 製造商:
- IXYS
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | IXYS | |
| Maximum Continuous Collector Current Ic | 32A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1700V | |
| Maximum Power Dissipation Pd | 190W | |
| Package Type | TO-247AD | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 3.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 15.75 mm | |
| Series | High Voltage | |
| Standards/Approvals | UL 94 V-0 | |
| Length | 19.81mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 IXYS | ||
Maximum Continuous Collector Current Ic 32A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1700V | ||
Maximum Power Dissipation Pd 190W | ||
Package Type TO-247AD | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 3.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 150°C | ||
Width 15.75 mm | ||
Series High Voltage | ||
Standards/Approvals UL 94 V-0 | ||
Length 19.81mm | ||
Automotive Standard No | ||
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.