IXYS, Type N-Channel IGBT, 100 A 1700 V, 3-Pin TO-247AD, Through Hole

此圖片僅供參考,請參閲產品詳細資訊及規格

可享批量折扣

小計(1 件)*

TWD560.00

(不含稅)

TWD588.00

(含稅)

Add to Basket
選擇或輸入數量
暫時缺貨
  • 18 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
1 - 7TWD560.00
8 - 14TWD547.00
15 +TWD538.00

* 參考價格

RS庫存編號:
146-4404
Distrelec 貨號:
302-53-445
製造零件編號:
IXYH30N170C
製造商:
IXYS
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

IXYS

Maximum Continuous Collector Current Ic

100A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

1700V

Maximum Power Dissipation Pd

937W

Package Type

TO-247AD

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±30 V

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

4V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Series

High Voltage

Automotive Standard

No

IXYS XPT (eXtreme-light Punch Through) IGBTs with current ratings ranging from 29A to 178A, are well-suited for high-voltage, high-speed power conversion applications. Designed using the proprietary thin-wafer XPT technology and the state-of-the-art IGBT process, these devices display such qualities as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Also, thanks to the positive temperature coefficient of their on-state voltage, the new high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage device ones.

Thin wafer XPT technology

Low on-state voltages VCE(sat)

Co-packed fast recovery diodes

Positive temperature coefficient of VCE(sat)

High efficiency

Increased reliability of power systems

Applications

Pulser circuits

Laser and X-ray generators

High-voltage power supplies

High-voltage test equipment

Capacitor discharge circuits

AC switches

相關連結