IXYS, Type N-Channel IGBT, 32 A 1700 V, 3-Pin TO-247AD, Through Hole
- RS庫存編號:
- 168-4504
- 製造零件編號:
- IXGH16N170
- 製造商:
- IXYS
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
TWD8,844.00
(不含稅)
TWD9,286.20
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 330 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 120 | TWD294.80 | TWD8,844.00 |
| 150 + | TWD283.00 | TWD8,490.00 |
* 參考價格
- RS庫存編號:
- 168-4504
- 製造零件編號:
- IXGH16N170
- 製造商:
- IXYS
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | IXYS | |
| Maximum Continuous Collector Current Ic | 32A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1700V | |
| Maximum Power Dissipation Pd | 190W | |
| Package Type | TO-247AD | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 3.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 19.81mm | |
| Series | High Voltage | |
| Width | 15.75 mm | |
| Standards/Approvals | UL 94 V-0 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 IXYS | ||
Maximum Continuous Collector Current Ic 32A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1700V | ||
Maximum Power Dissipation Pd 190W | ||
Package Type TO-247AD | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 3.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 19.81mm | ||
Series High Voltage | ||
Width 15.75 mm | ||
Standards/Approvals UL 94 V-0 | ||
Automotive Standard No | ||
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.