IXYS IXGH32N170, Type N-Channel IGBT, 75 A 1700 V, 3-Pin TO-247AD, Through Hole

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RS庫存編號:
194-899
Distrelec 貨號:
302-53-415
製造零件編號:
IXGH32N170
製造商:
IXYS
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品牌

IXYS

Product Type

IGBT

Maximum Continuous Collector Current Ic

75A

Maximum Collector Emitter Voltage Vceo

1700V

Maximum Power Dissipation Pd

350W

Package Type

TO-247AD

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

250ns

Maximum Collector Emitter Saturation Voltage VceSAT

3.3V

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Operating Temperature

150°C

Series

High Voltage

Standards/Approvals

UL 94 V-0

Automotive Standard

No

IGBT Discretes, IXYS


IGBT Discretes & Modules, IXYS


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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