IXYS IXGH24N170 IGBT, 50 A 1700 V, 3-Pin TO-247AD, Through Hole
- RS庫存編號:
- 194-883
- 製造零件編號:
- IXGH24N170
- 製造商:
- IXYS
此圖片僅供參考,請參閲產品詳細資訊及規格
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小計(1 件)*
TWD554.00
(不含稅)
TWD581.70
(含稅)
訂單超過 $1,300.00 免費送貨
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- 11 件準備從其他地點送貨
- 加上 14 件從 2026年1月16日 起發貨
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單位 | 每單位 |
|---|---|
| 1 - 7 | TWD554.00 |
| 8 - 14 | TWD543.00 |
| 15 + | TWD532.00 |
* 參考價格
- RS庫存編號:
- 194-883
- 製造零件編號:
- IXGH24N170
- 製造商:
- IXYS
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | IXYS | |
| Maximum Continuous Collector Current | 50 A | |
| Maximum Collector Emitter Voltage | 1700 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Package Type | TO-247AD | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 16.26 x 5.3 x 21.46mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| 選取全部 | ||
|---|---|---|
品牌 IXYS | ||
Maximum Continuous Collector Current 50 A | ||
Maximum Collector Emitter Voltage 1700 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Package Type TO-247AD | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 16.26 x 5.3 x 21.46mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
IGBT Discretes, IXYS
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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