IXYS IXGH24N170, N-Channel IGBT, 50 A 1700 V, 3-Pin TO-247AD, Through Hole, Surface
- RS庫存編號:
- 194-883
- Distrelec 貨號:
- 302-53-413
- 製造零件編號:
- IXGH24N170
- 製造商:
- IXYS
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- RS庫存編號:
- 194-883
- Distrelec 貨號:
- 302-53-413
- 製造零件編號:
- IXGH24N170
- 製造商:
- IXYS
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | IXYS | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 50A | |
| Maximum Collector Emitter Voltage Vceo | 1700V | |
| Maximum Power Dissipation Pd | 250W | |
| Package Type | TO-247AD | |
| Mount Type | Through Hole, Surface | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 290ns | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 3.3V | |
| Maximum Operating Temperature | 150°C | |
| Length | 20.32mm | |
| Standards/Approvals | UL 94 V-0 | |
| Height | 19.1mm | |
| Series | IXGH | |
| Width | 16.26mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 IXYS | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 50A | ||
Maximum Collector Emitter Voltage Vceo 1700V | ||
Maximum Power Dissipation Pd 250W | ||
Package Type TO-247AD | ||
Mount Type Through Hole, Surface | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 290ns | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 3.3V | ||
Maximum Operating Temperature 150°C | ||
Length 20.32mm | ||
Standards/Approvals UL 94 V-0 | ||
Height 19.1mm | ||
Series IXGH | ||
Width 16.26mm | ||
Automotive Standard No | ||
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.