Infineon IHW30N135R3FKSA1 IGBT, 30 A 1350 V, 3-Pin TO-247, Through Hole

RS庫存編號:: 110-7449
製造零件編號:: IHW30N135R3FKSA1
製造商:: Infineon

Infineon IHW30N135R3FKSA1 IGBT, 30 A 1350 V, 3-Pin TO-247, Through Hole

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 包，共 3 件）*

TWD398.10

(不含稅)

TWD418.02

訂單超過 $1,300.00 免費送貨

正在逐步停售

3 件準備從其他地點送貨
最終 12 件從 2026年3月30日起發貨

單位	每單位	每包*
3 - 3	TWD132.70	TWD398.10
6 - 27	TWD129.70	TWD389.10
30 - 57	TWD126.70	TWD380.10
60 - 147	TWD123.70	TWD371.10
150 +	TWD114.30	TWD342.90

* 參考價格

RS庫存編號:: 110-7449
製造零件編號:: IHW30N135R3FKSA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Maximum Continuous Collector Current	30 A
	Maximum Collector Emitter Voltage	1350 V
	Maximum Gate Emitter Voltage	±20V
	Maximum Power Dissipation	349 W
	Package Type	TO-247
	Mounting Type	Through Hole
	Channel Type	N
	Pin Count	3
	Transistor Configuration	Single
	Dimensions	16.13 x 5.21 x 21.1mm
	Gate Capacitance	2066pF
	Maximum Operating Temperature	+175 °C
	Minimum Operating Temperature	-40 °C

	選取全部
	品牌 Infineon
	Maximum Continuous Collector Current 30 A
	Maximum Collector Emitter Voltage 1350 V
	Maximum Gate Emitter Voltage ±20V
	Maximum Power Dissipation 349 W
	Package Type TO-247
	Mounting Type Through Hole
	Channel Type N
	Pin Count 3
	Transistor Configuration Single
	Dimensions 16.13 x 5.21 x 21.1mm
	Gate Capacitance 2066pF
	Maximum Operating Temperature +175 °C
	Minimum Operating Temperature -40 °C

Infineon TrenchStop IGBT Transistors, 1100 to 1600V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Infineon IHW30N135R3FKSA1 IGBT, 30 A 1350 V, 3-Pin TO-247, Through Hole

訂單超過 $1,300.00 免費送貨

Infineon TrenchStop IGBT Transistors, 1100 to 1600V

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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