Infineon IHW30N135R5XKSA1, N-Channel IGBT, 30 A 1.35 kV, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 218-4397
- 製造零件編號:
- IHW30N135R5XKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 5 件）*
TWD988.00
(不含稅)
TWD1,037.40
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 30 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD197.60 | TWD988.00 |
| 10 - 10 | TWD193.00 | TWD965.00 |
| 15 + | TWD180.40 | TWD902.00 |
* 參考價格
- RS庫存編號:
- 218-4397
- 製造零件編號:
- IHW30N135R5XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 30A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1.35kV | |
| Maximum Power Dissipation Pd | 330W | |
| Number of Transistors | 1 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Maximum Gate Emitter Voltage VGEO | ±20 ±25 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 21.1mm | |
| Series | IHW30N135R5 | |
| Width | 16.13mm | |
| Standards/Approvals | JESD-022 | |
| Height | 5.21mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 30A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1.35kV | ||
Maximum Power Dissipation Pd 330W | ||
Number of Transistors 1 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Maximum Gate Emitter Voltage VGEO ±20 ±25 V | ||
Maximum Operating Temperature 175°C | ||
Length 21.1mm | ||
Series IHW30N135R5 | ||
Width 16.13mm | ||
Standards/Approvals JESD-022 | ||
Height 5.21mm | ||
Automotive Standard No | ||
Infineon IHW30N135R5 Series IGBT, 330W Maximum Power Dissipation, 30A Max Continuous Collector Current - IHW30N135R5XKSA1
This IGBT is a high-voltage switching transistor designed for power conversion and control in demanding industrial environments. It is supplied in a TO-247 through-hole package with three pins and is intended for applications requiring elevated voltage handling and substantial current conduction while operating across a wide temperature range.
Features and Benefits:
• 1350 V rating enables operation in high-voltage systems
• 30 A continuous current supports heavy load driving
• 330 W power dissipation allows sustained power handling
• 1.65 V VCE(sat) yields reduced conduction losses under load
• ±20 V gate-emitter tolerance permits robust gate drive swings
• −40 °C to 175 °C temperature range maintains performance in harsh environments
• 30 A continuous current supports heavy load driving
• 330 W power dissipation allows sustained power handling
• 1.65 V VCE(sat) yields reduced conduction losses under load
• ±20 V gate-emitter tolerance permits robust gate drive swings
• −40 °C to 175 °C temperature range maintains performance in harsh environments
Applications
• Suitable for high-voltage motor drive stages
• Ideal for industrial inverter and converter designs
• Used with power supplies requiring through-hole mounting
• Can be used for traction and utility power electronics
• Appropriate for fast-switching high-voltage circuits
• Ideal for industrial inverter and converter designs
• Used with power supplies requiring through-hole mounting
• Can be used for traction and utility power electronics
• Appropriate for fast-switching high-voltage circuits
What is the device’s package and mounting style?
It is supplied in a TO-247 package and designed for through-hole mounting on power assemblies.
How does the device behave thermally under continuous operation?
It can dissipate up to 330 W and is specified for operation up to 175 °C case or junction temperatures.
What gate drive limits must be observed?
The gate-emitter rating is ±20 V, so drive circuits should remain within that voltage range.
What switching or conduction capability is provided for load design?
The device supports continuous collector currents up to 30 A with a maximum collector-emitter saturation of 1.65 V.
Are there recognised standards associated with the device?
It conforms to JESD-022 moisture sensitivity classification for handling and storage.
相關連結
- Infineon IHW30N135R5XKSA1 30 A 1350 V Through Hole
- Infineon IHW40N135R5XKSA1 80 A 1350 V Through Hole
- Infineon IHW20N135R5XKSA1 40 A 1350 V Through Hole
- Infineon IHW30N135R3FKSA1 IGBT 3-Pin TO-247, Through Hole
- Infineon IKWH30N65WR6XKSA1 30 A 650 V Through Hole
- Infineon IGW15N120H3FKSA1 30 A 1200 V Through Hole
- Infineon IKW15N120H3FKSA1 30 A 1200 V Through Hole
- Infineon IKW30N60H3FKSA1 30 A 600 V Through Hole