Infineon IHW40N135R5XKSA1, Type N-Channel Reverse Conducting IGBT, 80 A 1350 V, 3-Pin TO-247, Through Hole

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小計(1 包,共 2 件)*

TWD405.00

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TWD425.24

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單位
每單位
每包*
2 - 8TWD202.50TWD405.00
10 - 98TWD199.50TWD399.00
100 - 248TWD193.50TWD387.00
250 - 498TWD188.50TWD377.00
500 +TWD175.00TWD350.00

* 參考價格

包裝方式:
RS庫存編號:
215-6643
製造零件編號:
IHW40N135R5XKSA1
製造商:
Infineon
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品牌

Infineon

Maximum Continuous Collector Current Ic

80A

Product Type

Reverse Conducting IGBT

Maximum Collector Emitter Voltage Vceo

1350V

Maximum Power Dissipation Pd

394W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

±25 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.65V

Maximum Operating Temperature

175°C

Standards/Approvals

JESD-022, RoHS

Series

Resonant Switching

Automotive Standard

No

Infineon Resonant Switching Series Reverse Conducting IGBT, 1350V Max Collector Emitter Voltage, 80A Max Continuous Collector Current - IHW40N135R5XKSA1


This reverse-conducting IGBT is a high-voltage switching device designed for resonant converter topologies and power-electronics applications. It combines insulated-gate control with an integrated reverse-conduction path to simplify circuit design in high-voltage systems while operating across a wide ambient temperature range.

Features and Benefits:


• 1350V collector-emitter rating enables high-voltage switching capability
• 80A continuous collector current supports substantial load currents
• 1.65V typical Vce(sat) reduces conduction losses at high currents
• ±25V gate-emitter tolerance allows robust gate-drive margins
• 394W maximum power dissipation manages elevated thermal stress
• TO-247 through-hole package simplifies heatsinking and assembly

Applications


• Suitable for resonant converters in industrial power supplies
• Ideal for high-voltage inverters and switch-mode supplies
• Used with medium-power motor drives requiring reverse conduction
• Can be used for switch networks in renewable-energy systems
• Suitable for laboratory and bench prototyping with through-hole mounting

What temperature extremes can be expected during operation?


The device is specified to function from -40 °C up to 175 °C junction temperature, accommodating high-temperature switching environments.

How does the device simplify gate-drive design?


The gate-emitter rating of ±25V provides a wide allowable gate-voltage range, reducing sensitivity to drive transients and enabling flexible drive circuitry.

What package considerations affect thermal management?


Housed in a TO-247 through‑hole package, it allows direct attachment to external heatsinks and straightforward thermal interfacing for effective power dissipation.

Which regulatory or environmental standards apply to this component?


It conforms to RoHS and JESD-022 handling standards relevant to moisture sensitivity and hazardous-substance restrictions.

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