Infineon IHW20N135R5XKSA1 IGBT, 40 A 1350 V, 3-Pin PG-TO247-3
- RS庫存編號:
- 215-6635
- 製造零件編號:
- IHW20N135R5XKSA1
- 製造商:
- Infineon
可享批量折扣
小計(1 管,共 30 件)*
TWD1,656.00
(不含稅)
TWD1,738.80
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 210 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 60 | TWD55.20 | TWD1,656.00 |
| 90 - 120 | TWD53.00 | TWD1,590.00 |
| 150 + | TWD49.00 | TWD1,470.00 |
* 參考價格
- RS庫存編號:
- 215-6635
- 製造零件編號:
- IHW20N135R5XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current | 40 A | |
| Maximum Collector Emitter Voltage | 1350 V | |
| Maximum Gate Emitter Voltage | ±20 V, ±25 V | |
| Maximum Power Dissipation | 310 W | |
| Package Type | PG-TO247-3 | |
| Pin Count | 3 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current 40 A | ||
Maximum Collector Emitter Voltage 1350 V | ||
Maximum Gate Emitter Voltage ±20 V, ±25 V | ||
Maximum Power Dissipation 310 W | ||
Package Type PG-TO247-3 | ||
Pin Count 3 | ||
The Infineon reverse conducting insulated-gate bipolar transistor with monolithic body diode offers high breakdown voltage of 1350v.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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