Infineon, N-Channel IGBT Single Transistor IC, 40 A 1350 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 215-6635
- 製造零件編號:
- IHW20N135R5XKSA1
- 製造商:
- Infineon
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查看批量定價選項小計（1 管，共 30 件）*
TWD3,009.00
(不含稅)
TWD3,159.60
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 120 件從 2026年9月14日 起發貨
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單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 60 | TWD100.30 | TWD3,009.00 |
| 90 - 120 | TWD96.30 | TWD2,889.00 |
| 150 + | TWD89.00 | TWD2,670.00 |
* 參考價格
- RS庫存編號:
- 215-6635
- 製造零件編號:
- IHW20N135R5XKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 40A | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Collector Emitter Voltage Vceo | 1350V | |
| Maximum Power Dissipation Pd | 310W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.85V | |
| Maximum Gate Emitter Voltage VGEO | ±25 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 16.13mm | |
| Series | Resonant Switching | |
| Length | 42mm | |
| Standards/Approvals | IEC61249-2-21, RoHS | |
| Height | 5.21mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 40A | ||
Product Type IGBT Single Transistor IC | ||
Maximum Collector Emitter Voltage Vceo 1350V | ||
Maximum Power Dissipation Pd 310W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.85V | ||
Maximum Gate Emitter Voltage VGEO ±25 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Width 16.13mm | ||
Series Resonant Switching | ||
Length 42mm | ||
Standards/Approvals IEC61249-2-21, RoHS | ||
Height 5.21mm | ||
Automotive Standard No | ||
Infineon Resonant Switching Series IGBT Single Transistor IC, 1350V Max Collector Emitter Voltage, 40A Max Continuous Collector Current - IHW20N135R5XKSA1
This IGBT single-transistor IC is a high-voltage switching device designed for power-conversion environments where robust collector-emitter performance is required. It operates across an extended temperature span suitable for demanding thermal conditions and is supplied in a through-hole TO-247 package for conventional board mounting. The device targets resonant switching applications requiring substantial continuous current handling and low saturation during conduction.
Features and Benefits:
• 1350V collector-emitter rating enables high-voltage operation
• 40A continuous collector current supports heavy load currents
• 1.85V VCE(sat) reduces conduction losses under load
• ±25V gate-emitter tolerance allows wide drive voltages
• 310W power dissipation permits high-power switching
• -40 to 175 °C operational range sustains extreme temperatures
• 40A continuous collector current supports heavy load currents
• 1.85V VCE(sat) reduces conduction losses under load
• ±25V gate-emitter tolerance allows wide drive voltages
• 310W power dissipation permits high-power switching
• -40 to 175 °C operational range sustains extreme temperatures
Applications
• Suitable for resonant converters in power supplies
• Ideal for industrial motor drive inverter stages
• Used with high-voltage switch-mode power supplies
• Can be used for utility-grade power conversion modules
• Suitable for high-power DC-DC converter topologies
• Ideal for industrial motor drive inverter stages
• Used with high-voltage switch-mode power supplies
• Can be used for utility-grade power conversion modules
• Suitable for high-power DC-DC converter topologies
What mounting approach does this device require?
It is supplied in a TO-247 through-hole package intended for soldered board mounting and heat-sinking through the package tab.
How does the transistor manage heat in continuous operation?
The maximum power dissipation rating of 310W defines the thermal load it can handle when fitted to an appropriate thermal path such as a heat sink and correct airflow.
What gate-drive constraints must be observed?
The gate-emitter voltage must be kept within ±25V to avoid gate insulation stress and ensure reliable switching.
Are there material or regulatory restrictions relevant to design?
The device conforms to RoHS requirements and is manufactured using materials meeting IEC 61249-2-21 standards for certain substrate compositions.
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