Infineon IHW20N135R5XKSA1, Type N-Channel IGBT Single Transistor IC, 40 A 1350 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 215-6636
- 製造零件編號:
- IHW20N135R5XKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD505.00
(不含稅)
TWD530.25
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 25 件準備從其他地點送貨
- 加上 215 件從 2026年3月30日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD101.00 | TWD505.00 |
| 10 - 95 | TWD98.80 | TWD494.00 |
| 100 - 245 | TWD96.00 | TWD480.00 |
| 250 - 495 | TWD93.80 | TWD469.00 |
| 500 + | TWD91.20 | TWD456.00 |
* 參考價格
- RS庫存編號:
- 215-6636
- 製造零件編號:
- IHW20N135R5XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 40A | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Collector Emitter Voltage Vceo | 1350V | |
| Maximum Power Dissipation Pd | 310W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±25 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.85V | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.21mm | |
| Length | 42mm | |
| Series | Resonant Switching | |
| Standards/Approvals | IEC61249-2-21, RoHS | |
| Width | 16.13 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 40A | ||
Product Type IGBT Single Transistor IC | ||
Maximum Collector Emitter Voltage Vceo 1350V | ||
Maximum Power Dissipation Pd 310W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±25 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.85V | ||
Maximum Operating Temperature 175°C | ||
Height 5.21mm | ||
Length 42mm | ||
Series Resonant Switching | ||
Standards/Approvals IEC61249-2-21, RoHS | ||
Width 16.13 mm | ||
Automotive Standard No | ||
The Infineon reverse conducting insulated-gate bipolar transistor with monolithic body diode offers high breakdown voltage of 1350v.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
相關連結
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