Infineon, Type N-Channel Reverse Conducting IGBT, 83 A 650 V, 3-Pin TO-247, Through Hole

此圖片僅供參考，請參閲產品詳細資訊及規格

查看所有IGBTs
可享批量折扣

小計（1 管，共 240 件）*

TWD11,400.00

(不含稅)

TWD11,971.20

(含稅)

Add to Basket
選擇或輸入數量
暫時缺貨
  • 從 2026年8月05日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
每管*
240 - 960TWD47.50TWD11,400.00
1200 +TWD46.00TWD11,040.00

* 參考價格

RS庫存編號:
225-0575
製造零件編號:
IHW50N65R6XKSA1
製造商:
Infineon
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Infineon

Product Type

Reverse Conducting IGBT

Maximum Continuous Collector Current Ic

83A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

251W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.6V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Series

TrenchStop

Automotive Standard

No

The Infineon IHW50N65R6 is the 650 V, 50 A IGBT with monolithically integrated diode in TO-247 package with monolithically integrated diode is designed to fulfil demanding requirements of induction heating applications using half-bridge resonant topology.

Frequency range 20-75 kHz

Low EMI

Very tight parameter distribution

Maximum operating TJ of 175 °C

相關連結