Infineon, Type N-Channel IGBT, 30 A 1600 V, 3-Pin TO-247, Through Hole

RS庫存編號:: 218-4398
製造零件編號:: IHW30N160R5XKSA1
製造商:: Infineon

Infineon, Type N-Channel IGBT, 30 A 1600 V, 3-Pin TO-247, Through Hole

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可享批量折扣

小計（1 管，共 30 件）*

TWD2,472.00

(不含稅)

TWD2,595.60

訂單超過 $1,300.00 免費送貨

有庫存

加上 2,970 件從 2026年3月23日起發貨
加上 240 件從 2026年7月16日起發貨

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單位	每單位	每管*
30 - 30	TWD82.40	TWD2,472.00
60 - 90	TWD80.60	TWD2,418.00
120 +	TWD74.90	TWD2,247.00

* 參考價格

RS庫存編號:: 218-4398
製造零件編號:: IHW30N160R5XKSA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Maximum Continuous Collector Current Ic	30A
	Product Type	IGBT
	Maximum Collector Emitter Voltage Vceo	1600V
	Maximum Power Dissipation Pd	263W
	Number of Transistors	1
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	Type N
	Pin Count	3
	Maximum Collector Emitter Saturation Voltage VceSAT	1.85V
	Maximum Gate Emitter Voltage VGEO	±20 ±25 V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	175°C
	Height	5.3mm
	Standards/Approvals	JEDEC47/20/22
	Series	IHW30N160R5
	Length	21.5mm
	Width	16.3 mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Maximum Continuous Collector Current Ic 30A
	Product Type IGBT
	Maximum Collector Emitter Voltage Vceo 1600V
	Maximum Power Dissipation Pd 263W
	Number of Transistors 1
	Package Type TO-247
	Mount Type Through Hole
	Channel Type Type N
	Pin Count 3
	Maximum Collector Emitter Saturation Voltage VceSAT 1.85V
	Maximum Gate Emitter Voltage VGEO ±20 ±25 V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 175°C
	Height 5.3mm
	Standards/Approvals JEDEC47/20/22
	Series IHW30N160R5
	Length 21.5mm
	Width 16.3 mm
	Automotive Standard No

IHW30N160R5XKSA1 Datasheet

Infineon IGBT, 30A Maximum Continuous Collector Current, 1600V Maximum Collector Emitter Voltage - IHW30N160R5XKSA1

This IGBT is a robust semiconductor device designed for high voltage applications, featuring a maximum collector current of 30A and operating within a temperature range of -40°C to +175°C. The TO-247 package ensures convenient installation, while its dimensions of 16.3 x 21.5 x 5.3 mm provide a compact solution for various electronic needs.

Features & Benefits

• Reverse-conducting capability for enhanced performance

• Monolithic body diode reduces forward voltage loss

• Tight parameter distribution enhances reliability

• High ruggedness improves durability in demanding conditions

• Low EMI emissions ensure minimal interference in circuits

Applications

• Used for induction cooking

• Suitable for microwave oven circuitry

• Ideal for various high voltage switching

• Compatible with specialised semiconductor power modules

What are the key thermal characteristics of this device?

The thermal resistance from junction to ambient is 40 K/W, and the junction to case thermal resistance is 0.57 K/W, ensuring efficient heat management under load conditions.

How does this IGBT module handle high voltage applications?

It boasts a collector-emitter voltage rating of up to 1600V, making it suitable for high voltage environments while maintaining safe operation across specified limits.

What implications does the maximum power dissipation have for design?

With a maximum power dissipation of 263W, it allows for efficient energy management, ensuring that the device can operate effectively without thermal overload in typical applications.