Infineon IHW30N160R5XKSA1, N-Channel IGBT, 30 A 1.6 kV, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 218-4399
- Distrelec 貨號:
- 304-31-963
- 製造零件編號:
- IHW30N160R5XKSA1
- 製造商:
- Infineon
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* 參考價格
- RS庫存編號:
- 218-4399
- Distrelec 貨號:
- 304-31-963
- 製造零件編號:
- IHW30N160R5XKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 30A | |
| Maximum Collector Emitter Voltage Vceo | 1.6kV | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation Pd | 263W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±20 ±25 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.85V | |
| Maximum Operating Temperature | 175°C | |
| Width | 16.3mm | |
| Height | 5.3mm | |
| Series | IHW30N160R5 | |
| Length | 21.5mm | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 30A | ||
Maximum Collector Emitter Voltage Vceo 1.6kV | ||
Number of Transistors 1 | ||
Maximum Power Dissipation Pd 263W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±20 ±25 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.85V | ||
Maximum Operating Temperature 175°C | ||
Width 16.3mm | ||
Height 5.3mm | ||
Series IHW30N160R5 | ||
Length 21.5mm | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
Infineon IHW30N160R5 Series IGBT, 1600V Collector-Emitter Voltage, 30A Collector Current - IHW30N160R5XKSA1
This IGBT is a high-voltage, through‑hole transistor designed for power switching in demanding industrial environments. It operates as an N‑channel device in a TO‑247 package and is intended for applications requiring substantial current handling and elevated temperature tolerance.
Features and Benefits:
• Handles continuous collector current of 30 A for sustained loads
• Withstands collector-emitter voltage of 1600 V for high‑voltage systems
• Power dissipation rating of 263 W supports heavy switching duty
• Low collector-emitter saturation voltage of 1.85 V reduces conduction losses
• Gate-emitter voltage tolerance of ±20-25 V permits robust gate‑drive margins
• Qualified to JEDEC 47/20/22 for standardised thermal and mechanical resilience
• Withstands collector-emitter voltage of 1600 V for high‑voltage systems
• Power dissipation rating of 263 W supports heavy switching duty
• Low collector-emitter saturation voltage of 1.85 V reduces conduction losses
• Gate-emitter voltage tolerance of ±20-25 V permits robust gate‑drive margins
• Qualified to JEDEC 47/20/22 for standardised thermal and mechanical resilience
Applications
• Suitable for industrial high‑voltage inverter stages
• Used for medium‑power traction and motor‑drive modules
• Ideal for high‑voltage DC-DC conversion circuits
• Can be used for power supplies in industrial automation
• Used with thermal‑management systems operating at elevated temperatures
• Used for medium‑power traction and motor‑drive modules
• Ideal for high‑voltage DC-DC conversion circuits
• Can be used for power supplies in industrial automation
• Used with thermal‑management systems operating at elevated temperatures
What operating temperature range can it tolerate?
It functions across −40 °C to 175 °C, enabling use in wide thermal environments.
How many transistor elements are contained within the device?
The package contains a single transistor element for discrete switching.
What mounting method and package type does it use?
It is supplied for through‑hole mounting in a TO‑247 package.
Are there any approvals for mechanical and thermal testing?
It meets JEDEC 47/20/22 standards covering thermal cycling and related tests.
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